A method of manufacturing a semiconductor apparatus comprises the steps of forming, on a surface of a semiconductor substrate, an MIS transistor including a drain region and a source region each formed of an impurity diffusion region, forming an insulation film on the semiconductor substrate after the...http://www.google.fr/patents/US5990507?utm_source=gb-gplus-shareBrevet US5990507 - Semiconductor device having ferroelectric capacitor structures
Semiconductor device having ferroelectric capacitor structures
