A memory cell device of the type that includes a memory material switchable between electrical property states by application of energy, situated between first and second (“bottom” and “top”) electrodes has a top electrode including a larger body portion and a stem portion. The memory material...http://www.google.fr/patents/US7964437?utm_source=gb-gplus-shareBrevet US7964437 - Memory device having wide area phase change element and small electrode contact area
Memory device having wide area phase change element and small electrode ...
