The invention offers a structure that includes a substrate with a top surface and a bottom surface, an etched dielectric layer having sidewalls and an upper surface, wherein the etched dielectric layer with a thickness of v, is positioned upon a first portion of the top surface of the substrate but not...http://www.google.fr/patents/US6949833?utm_source=gb-gplus-shareBrevet US6949833 - Combined atomic layer deposition and damascene processing for definition of narrow trenches
Combined atomic layer deposition and damascene processing for definition of ...
