A method of semiconductor manufacturing is disclosed in which doping is accomplished by the implantation of ion beams formed from ionized molecules, and more particularly to a method in which molecular and cluster dopant ions are implanted into a substrate with and without a co-implant of non-dopant...http://www.google.fr/patents/US7919402?utm_source=gb-gplus-shareBrevet US7919402 - Cluster ion implantation for defect engineering
