A high frequency power FET device (22) is integrated with passive components (23,24,26,28,31), an electro-static discharge (ESD) device (27,127,227), and/or a logic structure (29) on a semiconductor body (13) to form a monolithic high frequency integrated circuit structure (10). The high frequency power...http://www.google.fr/patents/US5578860?utm_source=gb-gplus-shareBrevet US5578860 - Monolithic high frequency integrated circuit structure having a grounded source configuration
Monolithic high frequency integrated circuit structure having a grounded ...
