Methods, devices, and systems integrating Fin-JFETs and Fin-MOSFETs are provided. One method embodiment includes forming at least on Fin-MOSFET on a substrate and forming at least on Fin-JFET on the substrate....http://www.google.fr/patents/US7927938?utm_source=gb-gplus-shareBrevet US7927938 - Fin-JFET
