A method including, in a dielectric material over a contact on a substrate, forming a trench to the contact; introducing an electrode material along the sidewalls of the trench; introducing a phase change material over material along a first sidewall; and modifying the electrode material along the sidewalls...http://www.google.fr/patents/US6429064?utm_source=gb-gplus-shareBrevet US6429064 - Reduced contact area of sidewall conductor
