After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere...http://www.google.fr/patents/US7655513?utm_source=gb-gplus-shareBrevet US7655513 - Method of manufacturing a semiconductor device
