A semiconductor device having a p-n junction characterized by low electric field crowding and a resulting high avalanche breakdown voltage requirement. The semiconductor device is comprised of a semiconductor substrate having impurity atoms of one type and a first surface. A first doped region lies in...http://www.google.fr/patents/US4153904?utm_source=gb-gplus-shareBrevet US4153904 - Semiconductor device having a high breakdown voltage junction characteristic
Semiconductor device having a high breakdown voltage junction characteristic
