The plurality of memory cells of a dynamic random access memory (DRAM) are formed in a well of one majority carrier type, and the well is located in a substrate of the other majority carrier type. The well electrically isolates the memory cells from electrical noise signals created by current in the...http://www.google.fr/patents/US5999440?utm_source=gb-gplus-shareBrevet US5999440 - Embedded DRAM with noise-protecting substrate isolation well
Embedded DRAM with noise-protecting substrate isolation well
