The invention includes a method of forming a DRAM cell. A first substrate is formed to comprise first DRAM sub-structures separated from one another by an insulative material. A second semiconductor substrate comprising a monocrystalline material is bonded to the first substrate. After the bonding, second...http://www.google.fr/patents/US20030160242?utm_source=gb-gplus-shareBrevet US20030160242 - DRAM cell constructions
Numéro de demande: 10/393,696 Numéro de publication: US 2003/0160242 A1 Date de dépôt: 20 mars 2003 Brevet délivré: US6707090 ( Date de délivrance 16 mars 2004)
