Non-volatile memory cells store a level of charge corresponding to the data being stored in a dielectric material storage element that is sandwiched between a control gate and the semiconductor substrate surface over channel regions of the memory cells. More than two memory states are provided by one...http://www.google.fr/patents/US20030109093?utm_source=gb-gplus-shareBrevet US20030109093 - Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
Multi-state non-volatile integrated circuit memory systems that employ ...
Numéro de demande: 10/280,352 Numéro de publication: US 2003/0109093 A1 Date de dépôt: 25 oct. 2002 Brevet délivré: US6925007 ( Date de délivrance 2 août 2005)
