This invention relates to a method and resulting structure, wherein a DRAM may be fabricated by using silicon midgap materials for transistor gate electrodes, thereby improving refresh characteristics of access transistors. The threshold voltage may be set with reduced substrate doping requirements....http://www.google.fr/patents/US6924190?utm_source=gb-gplus-shareBrevet US6924190 - Use of gate electrode workfunction to improve DRAM refresh
Use of gate electrode workfunction to improve DRAM refresh
