In a method of forming a self-aligned contact, gates are formed on a semiconductor substrate in a striped pattern. Bit lines are formed in a striped pattern that extends cross-wise to the gates. The bit lines are isolated from one another by a first interlayer insulation layer. Next, a second interlayer...http://www.google.fr/patents/US20020034877?utm_source=gb-gplus-shareBrevet US20020034877 - Method of forming a self-aligned contact, and method of fabricating a semiconductor device having a self-aligned contact
Method of forming a self-aligned contact, and method of fabricating a ...
Numéro de demande: 09/847,289 Numéro de publication: US 2002/0034877 A1 Date de dépôt: 3 mai 2001 Brevet délivré: US6777341 ( Date de délivrance 17 août 2004)
