A method of forming a (gallium, aluminum, indium) nitride base layer on a substrate for subsequent fabrication, e.g., by MOCVD or MBE, of a microelectronic device structure thereon. Vapor-phase (Ga, Al, In) chloride is reacted with a vapor-phase nitrogenous compound in the presence of the substrate,...http://www.google.fr/patents/US6156581?utm_source=gb-gplus-shareBrevet US6156581 - GaN-based devices using (Ga, AL, In)N base layers
