The present invention comprises methods for producing semiconductor devices useful in high temperature applications. The invention is based on using silicon ion implantation to convert a portion of the p-type base layer of magnesium-doped GaN into n-type GaN. The boundary of the n-type GaN within the...http://www.google.fr/patents/US6432788?utm_source=gb-gplus-shareBrevet US6432788 - Method for fabricating an emitter-base junction for a gallium nitride bipolar transistor
Method for fabricating an emitter-base junction for a gallium nitride ...
