Disclosed are an apparatus for and a process of atomic layer deposition using remote plasma. A thin film is deposited to a desired thickness on a wafer by use of the apparatus, which comprises a plurality of transfer pipes for individually transferring the first and the second reactive gas and the carrier...http://www.google.fr/patents/US20030070617?utm_source=gb-gplus-shareBrevet US20030070617 - Atomic layer deposition apparatus and process using remote plasma
Atomic layer deposition apparatus and process using remote plasma
Numéro de demande: 09/973,760 Numéro de publication: US 2003/0070617 A1 Date de dépôt: 11 oct. 2001 Brevet délivré: US6656282 ( Date de délivrance 2 déc. 2003)
