A field effect transistor is formed as a first semiconductor element on a main surface of a first semiconductor layer (1). An interlayer insulating film (10) constituted by a first insulating layer (101) and a second insulating layer (102) is formed on the first semiconductor element. The first insulating...http://www.google.fr/patents/US5006913?utm_source=gb-gplus-shareBrevet US5006913 - Stacked type semiconductor device
