A laser annealing method for obtaining a crystalline semiconductor film having a large grain size, and a method of manufacturing a semiconductor device using the crystalline semiconductor film, are provided. Using a shape change (convex portion or concave portion) of an amorphous semiconductor film when...http://www.google.fr/patents/US7679131?utm_source=gb-gplus-shareBrevet US7679131 - Semiconductor device, manufacturing method thereof, and electronic device
Semiconductor device, manufacturing method thereof, and electronic device
