A first polysilicon film serving as an erase gate is deposited on the major surface of a semiconductor substrate on which a field oxide film is formed, so that the surface of the first polysilicon film is roughened. The surface of the first polysilicon film is thermally oxidized to form a first thermal...http://www.google.fr/patents/US5017505?utm_source=gb-gplus-shareBrevet US5017505 - Method of making a nonvolatile semiconductor memory apparatus with a floating gate
Method of making a nonvolatile semiconductor memory apparatus with a ...
