For recrystallizing a layer of polysilicon extending over a layer of silicon dioxide on a substrate of silicon single crystal, the silicon dioxide layer is interrupted at seeding locations which are spaced apart in at least one direction and at which the polysilicon layer comes into contact with the...http://www.google.fr/patents/US4592799?utm_source=gb-gplus-shareBrevet US4592799 - Method of recrystallizing a polycrystalline, amorphous or small grain material
Method of recrystallizing a polycrystalline, amorphous or small grain material
