A hybrid magnetic-semiconductor structure can be used as a memory element for the nonvolatile storage of digital information, as well as in other environments, including for example logic applications for performing digital combinational tasks, or a magnetic field sensor. The hybrid device uses ferromagnetic...http://www.google.fr/patents/US20040218443?utm_source=gb-gplus-shareBrevet US20040218443 - Hybrid semiconductor-magnetic device and method of operation
Hybrid semiconductor-magnetic device and method of operation
Numéro de demande: 10/853,545 Numéro de publication: US 2004/0218443 A1 Date de dépôt: 24 mai 2004 Brevet délivré: US6873545 ( Date de délivrance 29 mars 2005)
