In a method of fabricating a semiconductor device according to the present invention, a semiconductor film is formed on a substrate, and an insulator film is formed so as to cover the semiconductor film. Then, a dopant source is arranged on the insulator film and then, a region for electrical contact...http://www.google.fr/patents/US5183780?utm_source=gb-gplus-shareBrevet US5183780 - Method of fabricating semiconductor device
