A gate-all-around (GAA) transistor device has a pair of pillars that include the source/drain regions, a channel region bridging the source/drain regions, and a gate electrode and gate oxide which surround the channel region. The pillars are formed by providing a mono-crystalline silicon substrate, etching...http://www.google.fr/patents/US20070200178?utm_source=gb-gplus-shareBrevet US20070200178 - Gate-all-around type of semiconductor device and method of fabricating the same
Gate-all-around type of semiconductor device and method of fabricating the same
