A semiconductor double heterostructure formed on a GaAs substrate having an off (100) plane slightly tilted toward a predetermined direction, the double heterostructure including an InGaAs quantum well active strained layer sandwiched between potential barrier layers and including an interface between...http://www.google.fr/patents/US5530713?utm_source=gb-gplus-shareBrevet US5530713 - Strained layer InGaAs quantum well semiconductor laser on GaAs substrate with quantum well-barrier layer interface structure
Strained layer InGaAs quantum well semiconductor laser on GaAs substrate ...
