A phosphorus-doped amorphous silicon film and a silicon nitride film are serially grown over a semiconductor substrate. The obtained stack is patterned so as to obtain word lines. A CVD oxide film is grown on the entire surface and then anisotropically etched to thereby form sidewalls on the lateral...http://www.google.fr/patents/US20030218207?utm_source=gb-gplus-shareBrevet US20030218207 - Non-volatile semiconductor memory device and method of fabricating thereof
Non-volatile semiconductor memory device and method of fabricating thereof
Numéro de demande: 10/437,896 Numéro de publication: US 2003/0218207 A1 Date de dépôt: 15 mai 2003 Brevet délivré: US6940120 ( Date de délivrance 6 sept. 2005)
