Methods of fabricating transistor in which a first Group III nitride layer is formed on a substrate in a reactor, and a second Group III nitride layer is formed on the first Group III nitride layer. An insulating layer such as, for example, a silicon nitride layer is formed on the second Group III nitride...http://www.google.fr/patents/US7901994?utm_source=gb-gplus-shareBrevet US7901994 - Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers
Methods of manufacturing group III nitride semiconductor devices with ...
