In a method of manufacturing a semiconductor device, a CMOS section composed of an N-channel MOS transistor and a P-channel MOS transistor and a memory section composed of at least a transfer gate MOS transistor is formed on a substrate. A plurality of conductive plugs is formed to penetrate a laminate...http://www.google.fr/patents/US6004839?utm_source=gb-gplus-shareBrevet US6004839 - Semiconductor device with conductive plugs
