A method of fabricating a variable resistance device, wherein the resistance is changed by passing a voltage of various pulse length through the device, includes preparing a silicon substrate; forming a silicon oxide layer on the substrate; depositing a first metal layer on the silicon oxide, wherein...http://www.google.fr/patents/US6759249?utm_source=gb-gplus-shareBrevet US6759249 - Device and method for reversible resistance change induced by electric pulses in non-crystalline perovskite unipolar programmable memory
Device and method for reversible resistance change induced by electric ...
