A method of forming self-aligned MRAM contacts is disclosed. MRAM stacks including an upper layer of a conductive material are formed over portions of integrated circuitry. An insulating material is formed over the substrate, including the MRAM stacks with the upper layer of conductive material. The...http://www.google.fr/patents/US6780652?utm_source=gb-gplus-shareBrevet US6780652 - Self-aligned MRAM contact and method of fabrication
Self-aligned MRAM contact and method of fabrication
