A transistor gate forming method includes forming a first and a second transistor gate. Each of the two gates includes a lower metal layer and an upper metal layer. The lower metal layer of the first gate originates from an as-deposited material exhibiting a work function the same as exhibited in an...http://www.google.fr/patents/US8089128?utm_source=gb-gplus-shareBrevet US8089128 - Transistor gate forming methods and integrated circuits
Transistor gate forming methods and integrated circuits
