Spacers are formed on sidewalls of striplike parts of a pattern layer of periodic structure. The pattern layer is removed, and the spacers are covered with a further spacer layer, which is then structured to second sidewall spacers. Gaps between the spacers are filled with a complementary layer. The...http://www.google.fr/patents/US7291560?utm_source=gb-gplus-shareBrevet US7291560 - Method of production pitch fractionizations in semiconductor technology
Method of production pitch fractionizations in semiconductor technology
