A completely-light-shielding Cr section of the scribe-line region assumes a light-shielding structure of self-aligned type. A dicing mark section assumes a light-shielding structure of Cr setback type. A pattern section of a device region assumes a light-shielding structure of HT pattern type. ...http://www.google.fr/patents/US20020102473?utm_source=gb-gplus-shareBrevet US20020102473 - Photo mask having film formed from halftone material, method of manufacturing photo mask, and method of manufacturing semiconductor device
Photo mask having film formed from halftone material, method of ...
Numéro de demande: 09/912,536 Numéro de publication: US 2002/0102473 A1 Date de dépôt: 26 juil. 2001 Brevet délivré: US6537709 ( Date de délivrance 25 mars 2003)
