Disclosed here is a method for speeding up data writing and reducing power consumption by reducing the variation of the threshold voltage of each of non-volatile memory cells at data writing. When writing data in a memory cell, a voltage of about 8V is applied to the memory gate line, a voltage of about...http://www.google.fr/patents/US20040196695?utm_source=gb-gplus-shareBrevet US20040196695 - Nonvolatile memory device and semiconductor device
Nonvolatile memory device and semiconductor device
Numéro de demande: 10/805,365 Numéro de publication: US 2004/0196695 A1 Date de dépôt: 22 mars 2004 Brevet délivré: US7085157 ( Date de délivrance 1 août 2006)
