A symmetrically resistive memory material (such as a phase change material) is described for use as a rectifying element for driving symmetric or asymmetric resistive memory elements in a crosspoint memory architecture. The crosspoint architecture has a plurality of electrodes and a plurality of crossbar...http://www.google.fr/patents/US7929335?utm_source=gb-gplus-shareBrevet US7929335 - Use of a symmetric resistive memory material as a diode to drive symmetric or asymmetric resistive memory
Use of a symmetric resistive memory material as a diode to drive symmetric ...
