In order to selectively reduce the etching rate of the polyimide resin layer, ion implantation is carried out thereto. Preferably, the impurity ion such as As.sup.+, P.sup.+, B.sup.+, BF.sub.2.sup.+ is implanted with dosage of 1.times.10.sup.14 cm.sup.-2 or more. As a result, the polyimide resin layer...http://www.google.fr/patents/US4394211?utm_source=gb-gplus-shareBrevet US4394211 - Method of manufacturing a semiconductor device having a layer of polymide resin
Method of manufacturing a semiconductor device having a layer of polymide resin
