A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film....http://www.google.fr/patents/US7575947?utm_source=gb-gplus-shareBrevet US7575947 - Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic ...
