Methods and apparatus are provided for forming a metal or metal silicide barrier layer. In one aspect, a method is provided for processing a substrate including positioning a substrate having a silicon material disposed thereon in a substrate processing system, depositing a first metal layer on the substrate...http://www.google.fr/patents/US20030022487?utm_source=gb-gplus-shareBrevet US20030022487 - Barrier formation using novel sputter-deposition method
Barrier formation using novel sputter-deposition method
Numéro de demande: 10/044,412 Numéro de publication: US 2003/0022487 A1 Date de dépôt: 9 janv. 2002 Brevet délivré: US6740585 ( Date de délivrance 25 mai 2004)
