A polysilicon layer of a gate structure is covered by an implant blocking layer (e.g., silicon nitride). The implant blocking layer blocks introduction of implanted dopants while implanting an initial dose of first conductivity type dopant (e.g., for drain extension regions). The implant blocking layer...http://www.google.fr/patents/US6777300?utm_source=gb-gplus-shareBrevet US6777300 - Method to improve silicide formation on polysilicon
Method to improve silicide formation on polysilicon
