A semiconductor device having gate oxide with a first thickness and a second thickness is formed by initially implanting a portion of the gate area of the semiconductor substrate with nitrogen ions and then forming a gate oxide on the gate area. Preferably the gate oxide is grown by exposing the gate...http://www.google.fr/patents/US6767794?utm_source=gb-gplus-shareBrevet US6767794 - Method of making ultra thin oxide formation using selective etchback technique integrated with thin nitride layer for high performance MOSFET
Method of making ultra thin oxide formation using selective etchback ...
