A method for improving the etch behavior of disposable features in the fabrication of a semiconductor device is disclosed. The semiconductor device comprises a bottom anti-reflective coating layer and/or a disposable sidewall spacer which are to be removed in a subsequent etch removal process. The bottom...http://www.google.fr/patents/US20040121531?utm_source=gb-gplus-shareBrevet US20040121531 - Method of removing features using an improved removal process in the fabrication of a semiconductor device
Method of removing features using an improved removal process in the ...
Numéro de demande: 10/624,776 Numéro de publication: US 2004/0121531 A1 Date de dépôt: 22 juil. 2003 Brevet délivré: US7041583 ( Date de délivrance 9 mai 2006)
