Multi-capacitor drain extended transistor devices and methods are provided. A first capacitor structure comprises a first dielectric layer (14) and a first gate layer (16) and first and second lateral sides. The first capacitor structure overlies a channel region of a first conductivity type in a semiconductor...http://www.google.fr/patents/US7060556?utm_source=gb-gplus-shareBrevet US7060556 - Drain extended MOS transistors with multiple capacitors and methods of fabrication
Drain extended MOS transistors with multiple capacitors and methods of ...
