An ultranarrow insulated trench isolation structure is formed in a semiconductor substrate without creating voids in the insulating material which adversely affect the performance of finished devices. Embodiments include forming a narrow trench in the semiconductor substrate, then forming a spacer on...http://www.google.fr/patents/US6391784?utm_source=gb-gplus-shareBrevet US6391784 - Spacer-assisted ultranarrow shallow trench isolation formation
