A method and apparatus measure properties of two layers of a damascene structure (e.g. a silicon wafer during fabrication), and use the two measurements to identify a location as having voids. The two measurements may be used in any manner, e.g. compared to one another, and voids are deemed to be present...http://www.google.fr/patents/US20060232768?utm_source=gb-gplus-shareBrevet US20060232768 - Evaluating a multi-layered structure for voids
Numéro de demande: 11/454,332 Numéro de publication: US 2006/0232768 A1 Date de dépôt: 16 juin 2006 Brevet délivré: US7301619 ( Date de délivrance 27 nov. 2007)
