Sub-micron contacts/vias and conductive lines in a dielectric layer are formed by etching through a photoresist mask containing openings having a dimension less than that achievable by conventional photolithographic techniques. Such minimal size openings are obtained by initially forming an oversized...http://www.google.fr/patents/US5863707?utm_source=gb-gplus-shareBrevet US5863707 - Method for producing ultra-fine interconnection features
Method for producing ultra-fine interconnection features
