A plurality of first layers made of AlGaN mixed crystal each having a thickness of the order of 1 to 100 nm and a plurality of second layers of p-type GaN with Mg each having a thickness of the order of 1 to 100 nm are alternately stacked. Since each of the first and second layers is thin, the stacked...http://www.google.fr/patents/US6104039?utm_source=gb-gplus-shareBrevet US6104039 - P-type nitrogen compound semiconductor and method of manufacturing same
P-type nitrogen compound semiconductor and method of manufacturing same
