Methods for manufacturing semiconductor devices with contact bodies extended in a direction of a bit line to increase the contact area between a contact body and a storage electrode is provided. In one aspect a method includes forming gate lines on a semiconductor substrate, forming a first insulating...http://www.google.fr/patents/US7205241?utm_source=gb-gplus-shareBrevet US7205241 - Method for manufacturing semiconductor device with contact body extended in direction of bit line
Method for manufacturing semiconductor device with contact body extended in ...
