In a plasma-CVD method and apparatus, plasma is formed from a film material gas in a process chamber and, in the plasma, a film is deposited on a substrate disposed in the process chamber. Formation of the plasma from the material gas is performed by application of an rf-power prepared by effecting an...http://www.google.fr/patents/US5562952?utm_source=gb-gplus-shareBrevet US5562952 - Plasma-CVD method and apparatus
