A gallium nitride-based compound semiconductor laser has a double-heterojunction structure, in which an active layer is sandwiched between cladding layers, on a sapphire substrate. A GaN current blocking layer having a striped opening portion is formed on the p-cladding layer. A p-GaN buried layer and...http://www.google.fr/patents/US5987048?utm_source=gb-gplus-shareBrevet US5987048 - Gallium nitride-based compound semiconductor laser and method of manufacturing the same
Gallium nitride-based compound semiconductor laser and method of ...
