A semiconductor device includes a first semiconductive region of one conductivity type, a first electrode and a second electrode formed on said first semiconductive region, a second semiconductive region of the opposite conductivity type contiguous to a current path portion extending between said first...http://www.google.fr/patents/US3999207?utm_source=gb-gplus-shareBrevet US3999207 - Field effect transistor with a carrier injecting region
Field effect transistor with a carrier injecting region
